dm th6016l ps document number: ds 38436 rev. 1 - 2 1 of 7 www.diodes.com april 2016 ? diodes incorporated dm th6016l ps advanced information 60v 175c n - channel enhancement mode mosfet powerdi product summary b v dss r ds(on) i d t c = + 25c 60 v 1 6 m? @ v gs = 10 v 3 7.1 a 24 m? @ v gs = 4.5 v 30.3 a description this mosfet is designed to minimize the on - state resistance (r ds(on ) ) and maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? power management ? dc - dc converters ? motor control features ? rated to + 175 c C ideal for high ambient temperature environments ? 1 00% unclamped inductive switching C e nsures m ore r eli able and robust end application ? high conversion efficiency ? low r ds( on ) C minimizes on - state losses ? low input capacitance ? fast switching speed ? thermally efficient package - cooler running applications ? <1.1mm package profile C ideal for thin applications ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? an automotive - compliant part is available under separate datasheet ( dm th6016l psq ) mechanical data ? case: powerdi5060 - 8 ? case material: molded plastic, Dgreen molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal finish - matte tin a nnealed over copper leadframe. solderable per mil - std - 202, method 208 ? weight: 0.097 grams ( a pp roximate ) ordering information (note 4 ) part number case packaging dm t h 6 016 l ps - 13 powerdi5060 - 8 2 , 500 / tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds defin itions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information bottom view t op view pin configuration top view internal schematic powerdi5060 - 8 pin1 s d d g d d s s h6 0 16l s s s s g d d d d yy ww =manufacturer d s g green
dm th6016l ps document number: ds 38436 rev. 1 - 2 2 of 7 www.diodes.com april 2016 ? diodes incorporated dm th6016l ps advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 60 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10 v t c = +25c t c = + 10 0 c i d 3 7.1 26 . 2 a continuous drain current (note 5 ) v gs = 10 v t a = +25c t a = + 10 0c i d 10 . 6 7.5 a pulsed drain curren t ( 10 dm 75 a maximum continuous body diode f orward current (note 6 ) i s 3 1 a avalanche current , l = 0.1mh i as 15.3 a avalanche energy , l = 0.1mh e as 11.7 mj thermal characteristics characteristic symbol value unit total power dissipation (note 5 ) t a = + 25 c p d 3 w thermal resistance, junction to ambient (note 5 ) r ja 49 c/w total power dissipation (note 6 ) t c = + 25 c p d 37.5 w thermal resistance, junction to case (note 6 ) r j c 4 c/w operating and storage temperature range t j, t stg - 55 to +1 75 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 6 0 gs = 0v, i d = 250 a zero gate voltage drain current i dss ds = 48 v, v gs = 0v gate - source leakage i gss gs = ? ds = 0v on characteristics (note 7 ) gate threshold voltage v gs (th) 1 ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) gs = 10 v, i d = 20 a gs = 4 .5 v, i d = 18 a diode forward voltage v sd gs = 0v, i s = 1 a dynamic characteristics (note 8 ) input capacitance c iss ds = 30 v, v gs = 0v , f = 1 mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ? ds = 30 v, i d = 10 a total gate charge ( v gs = 10 v ) q g gs gd d( on ) gs = 10 v , v ds = 30 v , r g = 6 d = 10 a turn - on rise time t r d( off ) f rr f = 10 a, di/dt = 10 0a/ s reverse recovery charge q rr notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1 - inch square copper plate . 6 . thermal resistance from junction to soldering point (on the exposed drain pad) . 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dm th6016l ps document number: ds 38436 rev. 1 - 2 3 of 7 www.diodes.com april 2016 ? diodes incorporated dm th6016l ps advanced information 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = 2.5v v gs = 3.0v v gs = 3.5v v gs = 4.0v v gs = 4.5v v gs = 5.0v v gs = 10v 0 5 10 15 20 25 30 0 1 2 3 4 5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5.0v - 55 25 85 125 150 175 8.00 10.00 12.00 14.00 16.00 18.00 20.00 22.00 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance (m ? ) i d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = 4.5v v gs = 10v 0 5 10 15 20 25 30 35 40 45 50 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance (m ? gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 20a i d = 18a 0.005 0.01 0.015 0.02 0.025 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature v gs =10v - 55 25 85 125 150 175 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ( ) figure 6. on - resistance variation with temperature v gs = 10v, i d = 20a v gs = 4.5v, i d = 18a
dm th6016l ps document number: ds 38436 rev. 1 - 2 4 of 7 www.diodes.com april 2016 ? diodes incorporated dm th6016l ps advanced information 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance ( ? ) t j , junction temperature ( ) figure 7. on - resistance variation with temperature v gs = 10v, i d = 20a v gs = 4.5v, i d = 18a 0 0.5 1 1.5 2 2.5 3 - 50 - 25 0 25 50 75 100 125 150 175 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 250 a i d = 1ma 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs = 0v t a = - 55 o c t a = 25 o c t a = 85 o c t a = 125 o c t a = 150 o c t a = 175 o c 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 v gs (v) qg (nc) figure 11. gate charge v ds = 30v, i d = 10a 0.01 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) =175 c =25 gs =10v r ds(on) limited p w =1s p w =100ms p w =10ms p w =1ms p w =100 s p w =10 s
dm th6016l ps document number: ds 38436 rev. 1 - 2 5 of 7 www.diodes.com april 2016 ? diodes incorporated dm th6016l ps advanced information 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r jc (t) = r(t) * r jc r jc = 4 /w duty cycle, d = t1 / t2 d=0.9 d=0.7 d=0.5 d=0.3 d=0.1 d=0.05 d=0.02 d=0.01 d=0.005 d=single pulse
dm th6016l ps document number: ds 38436 rev. 1 - 2 6 of 7 www.diodes.com april 2016 ? diodes incorporated dm th6016l ps advanced information package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 powerdi5060 - 8 dim min max typ a 0.90 1.10 1.00 a1 0.00 0.05 ? ? b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 d 5.15 bsc d1 4.70 5.10 4.90 d2 3.70 4.10 3.90 d3 3.90 4.30 4.10 e 6.15 bsc e1 5.60 6.00 5.80 e2 3.28 3.68 3.48 e3 3.99 4.39 4.19 e 1.27 bsc g 0.51 0.71 0.61 k 0.51 ? ? ? ? l 0.51 0.71 0.61 l1 0.100 0.200 0.175 m 3.235 4.035 3.635 m1 1.00 1.40 1.21 10o 12o 11o 1 6o 8o 7o all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 4.100 x2 0.755 x3 4.420 x4 5.610 y 1.270 y1 0.600 y2 1.020 y3 0.295 y4 1.825 y5 3.810 y6 0.180 y7 6.610 d1 e1 a l k m l1 d2 g e2 detail a 0(4x) a1 c e d e 1 detail a b (8x) e/2 1 01 (4x) m1 b2 (4x) b3 (4x) e3 d3 y7 x3 y2 y5 x1 g1 x c y(4x) g x2 y3 y4 y6 x4 y1
dm th6016l ps document number: ds 38436 rev. 1 - 2 7 of 7 www.diodes.com april 2016 ? diodes incorporated dm th6016l ps advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). d iodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or o ther changes without further notice to this document and any product described herein. diodes incorporated does not assume any liab ility arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or prod ucts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporat ed does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channe l. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall in demnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized app lication. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. thi s document is written in english but may be translated into multiple languages for reference. only the english version of th is document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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